| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for predicting and eliminating an OTP (on time programmable) memory of a high write-failure rate, a method for setting a voltage which is optimal for writing on a memory element, and an OTP memory to which the methods are applicable. SOLUTION: In the OTP memory having a memory cell array and an inspection circuit, the OTP memory with a low failure rate is provided, by predicting the failure rate of the memory element of the memory cell array from a cumulative frequency distribution of a short circuit rate, with respect to a writing voltage of the memory element included in the inspection circuit, and eliminating a substrate with a high failure rate. In the OTP memory where a shape of the cumulative frequency distribution is substantially linear, the OPT memory of reduced power consumption is provided, by estimating the value of a voltage optimal for writing of the memory element by using the cumulative frequency distribution, and setting a voltage optimal for writing of the memory element. COPYRIGHT: (C)2010,JPO&INPIT |
