| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for cleaning a plasma processing apparatus which can more reliably remove deposits, as compared with conventional methods and can prevent the occurrence of failures due to residual deposits, and to provide a storage medium. SOLUTION: A cleaning gas containing oxygen gas and nitrogen gas in which a nitrogen gas flow rate to a total flow rate of the nitrogen gas and the oxygen gas is in a range of 0.05 to 0.5 is introduced in a processing chamber, in such a state that a substrate is not mounted on a mount, and a high-frequency power is applied between the mount and an upper electrode so that a plasma of the cleaning gas is generated for cleaning the inside of the processing chamber. COPYRIGHT: (C)2010,JPO&INPIT
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