发明名称 Semiconductor device and method for fabricating the same
摘要 Provided are a semiconductor device and a method for fabricating the same. The semiconductor device may include a substrate including a cell area and a scribe lane area defining the cell area, at least one pad on the cell area, at least one through electrode penetrating the substrate and electrically connected to the at least one pad, and at least one dummy through electrode penetrating the substrate and spaced apart from the at least one through electrode. The semiconductor device may further include at least one conductive pattern on the substrate electrically connecting the at least one through electrode to the at least one dummy through electrode.
申请公布号 US2010224977(A1) 申请公布日期 2010.09.09
申请号 US20100656294 申请日期 2010.01.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM KYUNG-MAN
分类号 H01L25/065;H01L23/538 主分类号 H01L25/065
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