Method of forming phase change material layer and method of fabricating phase change memory device

摘要

A method of forming a phase change material layer and a method of fabricating a phase change memory device, the method of forming a phase change material layer including forming an amorphous germanium layer by supplying a germanium containing first source into a reaction chamber; cutting off supplying the first source after forming the amorphous germanium layer; and forming amorphous Ge1-xTex (0<x≦̸0.5) such that forming the amorphous Ge1-xTex (0<x≦̸0.5) includes supplying a tellurium containing second source into the reaction chamber after cutting off supplying the first source.