发明名称 |
RESISTIVE MEMORY DEVICES HAVING A STACKED STRUCTURE AND METHODS OF OPERATION THEREOF |
摘要 |
A memory device includes a stacked resistive memory cell array comprising a plurality of resistive memory cell layers stacked on a semiconductor substrate, wherein respective memory cell layers are configured to store data according to respective program modes comprising a number of bits per cell. The memory device further includes a control circuit configured to identify a program mode of a selected memory cell layer responsive to an address signal and to access the selected memory cell layer responsive to the address signal according to the identified program mode. The program modes may include a single-level cell mode and at least one multi-level cell mode.
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申请公布号 |
US2010226165(A1) |
申请公布日期 |
2010.09.09 |
申请号 |
US20100714950 |
申请日期 |
2010.03.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SANG BEOM;PARK CHUL WOO;CHOI HYUN HO;KIM HO JUNG |
分类号 |
G11C11/00;G11C7/00;G11C8/08 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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