Verfahren zur Herstellung einer Schablonenmaske

摘要

Disclosed herein is a method of fabricating a stencil mask to be used in an E-beam lithographic process. The method comprises, after forming a silicon nitride film over the entire surface of a wafer, a step of dividing the silicon nitride film into at least two sub-portions to form silicon nitride film patterns. A stress applied to the silicon nitride film is thus reduced.