| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photodiode that is a silicon photodiode and has sufficient spectral sensitivity characteristics in near infrared wavelength band, and to provide the photodiode. <P>SOLUTION: A hole H1 reaching an insulating layer 4 through a semiconductor substrate 2 is formed in a position corresponding to a photosensitive area S1 by dry-etching the semiconductor substrate 2 until the insulating layer 4 is exposed. An irregular part 22 is then formed on a surface 7 exposed to the hole H1 of an n<SP>+</SP>embedded layer 6. The surface exposed to the hole H1 of the n<SP>+</SP>embedded layer 6 of the insulating layer 4 is irradiated with picosecond to femtosecond pulse laser beam, whereby the insulating layer 4 is removed, and the surface 7 exposed to the hole H1 of the n<SP>+</SP>embedded layer 6 is also roughed by the pulse laser beam to form the irregular part 22 entirely over the surface 7. The substrate with the irregular part 22 formed thereon is thermally treated. <P>COPYRIGHT: (C)2010,JPO&INPIT |
