| 摘要 |
PROBLEM TO BE SOLVED: To provide manufacturing methods of a thin film transistor and a display wherein few masks are used. SOLUTION: The thin film transistor is manufactured by laminating a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film, and by forming a resist mask thereon, and further, by forming a thin-film laminating body by performing a first etching, and moreover, by forming a gate electrode layer by performing a second etching accompanied with a side etching, by a dry etching, to the first conductive film, and furthermore, by forming a source electrode and a drain electrode etc. thereafter. It is preferred that the at least sidewalls of the etched semiconductor film are subjected to an oxidation processing, before performing the dry etching. COPYRIGHT: (C)2010,JPO&INPIT |
