| 摘要 |
A solid-state imaging device includes: a peripheral circuit element formed on a semiconductor substrate having an image sensing area where an image sensing element that captures an image of an object is provided and a peripheral area located on the periphery of the image sensing area, the peripheral circuit element being in the peripheral area; a plurality of insulation films formed to cover at least the peripheral circuit element; and a contact plug formed in a contact hole through the plurality of insulation films and above the peripheral circuit element in such a manner that the contact plug is electrically connected to the peripheral circuit element; the plurality of insulation films including a first insulation film, and a second insulation film formed to cover the first insulation film, the contact hole being formed by etching the second insulation film so as to remove a portion thereof where the contact hole is to be formed, and then etching the first insulation film so as to remove a portion thereof where the contact hole is to be formed, the first insulation film being formed to serve as an etching stopper layer during etching of the second insulation film, the first insulation film also being formed to cover a portion where the contact hole is to be formed above the peripheral circuit element, with portions other than the portion where the contact hole is to be formed above the peripheral circuit element being exposed.
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