| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate support table of a plasma processing device that stably controls a substrate at relatively high temperature. <P>SOLUTION: The substrate support table includes: an electrostatic attraction plate 14 incorporating a first electrode for electrostatically attracting the substrate W, a second electrode for applying a bias to the substrate W and a heater for heating the substrate; a cylindrical flange 13 welded to a lower surface of the electrostatic attraction plate 14 and made of an alloy having thermal characteristics similar to those of the electrostatic attraction plate 14; and a support table 10 which has an O ring 12 on a surface opposed to a lower surface of the flange 13 and to which the flange 13 is fitted with the O ring 12 interposed. When bias power applied to the substrate W is changed, heater power for heating the substrate W is changed so that the temperature of the substrate W becomes constant. <P>COPYRIGHT: (C)2010,JPO&INPIT |
