| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non volatile memory which erases one or more pages which is smaller than a complete full block. <P>SOLUTION: A selected voltage is applied to each of a plurality of selected word lines via pass transistors while a non selected voltage is applied to each of a plurality of non selected word lines of the block selected via the pass transistors. A substrate voltage is applied to the substrate of the selected block. The common selected voltage is applied to each selected word line while the common non selected voltage is applied to each non selected word line. The selected and non selected voltages are applied to any word line of the selected block, and a page erasing and verifying is applied to the block with a plurality of erased pages and a plurality of non-erased pages. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
