| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device that can suppress variation in power generation output due to change with time in film formation condition of a back transparent electrode layer or back electrode layer. <P>SOLUTION: In the method of manufacturing the photoelectric conversion device, which sequentially forms a photoelectric conversion layer, the back transparent electrode layer and the back electrode layer on a substrate, at least one of the back transparent electrode layer and the back electrode layer is formed by a DC sputtering method under a condition in which an applied voltage during the formation of the back transparent electrode layer or the back electrode layer is controlled to a constant value, the applied voltage having a final voltage value when the back transparent electrode layer or the back electrode layer is formed under the condition in which the applied voltage during the film formation is controlled to the constant value. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
