| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve a mounted field effect transistor having substantially reduced channel resistance. <P>SOLUTION: A method of manufacturing the mounted field effect transistor includes: a process (a) for forming a transistor 100; a process (b) for polishing a formation substrate 101; and a process (c) for fixing a transistor 100 of which the formation substrate 101 has been polished to a holding substrate 200. In the process (a), a first semiconductor layer and a second semiconductor layer having a band gap larger than that of the first one are successively formed on a main surface of the formation substrate 101. In the process (b), a surface at a side opposite to the main surface of the formation substrate 101 is polished. In the process (c), the transistor 100 is fixed onto the holding substrate 200 while stress in a direction, where warpage of the formation substrate 101 becomes small, is applied onto the formation substrate 101. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
