| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor having excellent transistor characteristics, a method of manufacturing the same, a display, and a semiconductor device. SOLUTION: The thin film transistor includes: a gate electrode 2 formed on a substrate; a gate insulating film 3 covering the gate electrode; a semiconductor layer 4 formed on the gate insulating film 3 and disposed facing the gate electrode 2; a source electrode 7 and a drain electrode 8 formed on the semiconductor layer 4 through an n-type ohmic contact layer 6 containing n-type impurities; and a p-type semiconductor layer 5 formed between the n-type ohmic contact layer 6 under the source electrode 7 and the semiconductor layer 4 and between the n-type ohmic contact layer 6 under the drain electrode 8 and the semiconductor layer 4 respectively. COPYRIGHT: (C)2010,JPO&INPIT |
