发明名称 PLASMA PROCESSING APPARATUS, AND METHOD AND APPARATUS FOR MEASURING TEMPERATURE
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of highly accurately measuring the temperature of a substrate or the like and capable of highly accurately and efficiently performing plasma processing of the substrate, and to provide a temperature measuring method and a temperature measuring apparatus. SOLUTION: The plasma processing apparatus includes a vacuum chamber 2, a mounting table 3, a base plate 9 arranged under the mounting table 3 through a space between the mounting table 3 and the base plate 9, and a temperature measuring means, wherein an upper portion over the mounting table 3 is set to be maintained under a vacuum atmosphere and the space between the mounting table 3 and the base plate 9 is set to be maintained under a normal pressure atmosphere. In the plasma processing apparatus, airtightly sealed temperature measuring windows 12 to 15 are formed between the upper and lower surfaces of the mounting table 3 so as to optically communicate the upper and lower surfaces of the mounting table 3 to transmit measured light of the temperature measuring means, and a connection member 30 for connecting the mounting table 3 and the base plate 9 is formed between the mounting table 3 and the base plate 9. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010199526(A) 申请公布日期 2010.09.09
申请号 JP20090074603 申请日期 2009.03.25
申请人 TOKYO ELECTRON LTD 发明人 MATSUDO TATSUO;KOSHIMIZU CHISHIO;ABE ATSUSHI
分类号 H01L21/3065;C23C16/509;C23C16/52;H01L21/31 主分类号 H01L21/3065
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