NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an inexpensive non-volatile semiconductor device having high reliability, and to provide a method for manufacturing the same. SOLUTION: A memory string MS includes: a pair of columnar portions; a U-shape semiconductor layer 35 having a coupling portion for coupling the lower ends of the columnar portions; a tunnel insulating layer 34c for surrounding the columnar portions; a charge accumulating layer 34b; a block insulating layer 34a; and word line conductive layers 32a-32d for surrounding the block insulating layer 34a. A source side selection transistor SSTr includes: a source side columnar semiconductor layer 47b extending upward from the columnar portions; a second source side gate insulating layer 46d and a first source side gate insulating layer 46b for surrounding the source side columnar semiconductor layer 47b; and a source side conductive layer 42b for surrounding the first source side gate insulating layer 46b. The block insulating layer 34a is formed continuously to the source side gate insulating layer 46B. The U-shape semiconductor layer 35 is formed continuously to the source side columnar semiconductor layer 47b. COPYRIGHT: (C)2010,JPO&INPIT