发明名称 |
FABRICATING ELECTRONIC-PHOTONIC DEVICES HAVING AN ACTIVE LAYER WITH SPHERICAL QUANTUM DOTS |
摘要 |
A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.
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申请公布号 |
US2010226400(A1) |
申请公布日期 |
2010.09.09 |
申请号 |
US20090397739 |
申请日期 |
2009.03.04 |
申请人 |
ALCATEL-LUCENT USA, INCORPORATED |
发明人 |
SAUER NICK;WEIMANN NILS;ZHANG LIMING |
分类号 |
H01S5/32;H01L33/00;H01S5/34 |
主分类号 |
H01S5/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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