发明名称 Vorrichtung zum Abschätzen der Lebensdauer von Halbleiter-Material
摘要 <p>A method of and apparatus for evaluating the lifetime of a semiconductor material which is capable of measuring, in a non-contact and non-destructive manner, the lifetime of a surface thin-layer portion so as to evaluate the quality of a semiconductor device formed of an epitaxial wafer or a thin device-forming material. Light within a short-wavelength region is radiated for a short period of time on the surface of a semiconductor material to be evaluated, thereby generating carriers effectively on the surface and in a surface thin-layer. An electromagnetic wave within a millimeter to sub-millimeter wave region is projected onto the surface, and a wave reflected from the surface is measured to obtain a decay curve of the carriers. On the basis of the carrier decay curve, the lifetime of the surface as well as a surface thin-layer portion of the semiconductor material is evaluated.</p>
申请公布号 DE4400097(B4) 申请公布日期 2010.09.09
申请号 DE19944400097 申请日期 1994.01.04
申请人 SCHOOL JUDICIAL PERSON IKUTOKU GAKUEN, ATSUGI;ASYST JAPAN INC. 发明人 OGITA, YOICHIRO;KUSAMA, TATEO
分类号 G01N21/00;H01L21/66;G01N22/00;G01R31/265 主分类号 G01N21/00
代理机构 代理人
主权项
地址