发明名称 |
Vorrichtung zum Abschätzen der Lebensdauer von Halbleiter-Material |
摘要 |
<p>A method of and apparatus for evaluating the lifetime of a semiconductor material which is capable of measuring, in a non-contact and non-destructive manner, the lifetime of a surface thin-layer portion so as to evaluate the quality of a semiconductor device formed of an epitaxial wafer or a thin device-forming material. Light within a short-wavelength region is radiated for a short period of time on the surface of a semiconductor material to be evaluated, thereby generating carriers effectively on the surface and in a surface thin-layer. An electromagnetic wave within a millimeter to sub-millimeter wave region is projected onto the surface, and a wave reflected from the surface is measured to obtain a decay curve of the carriers. On the basis of the carrier decay curve, the lifetime of the surface as well as a surface thin-layer portion of the semiconductor material is evaluated.</p> |
申请公布号 |
DE4400097(B4) |
申请公布日期 |
2010.09.09 |
申请号 |
DE19944400097 |
申请日期 |
1994.01.04 |
申请人 |
SCHOOL JUDICIAL PERSON IKUTOKU GAKUEN, ATSUGI;ASYST JAPAN INC. |
发明人 |
OGITA, YOICHIRO;KUSAMA, TATEO |
分类号 |
G01N21/00;H01L21/66;G01N22/00;G01R31/265 |
主分类号 |
G01N21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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