A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate (11), a first semiconductor layer (15) on the substrate (11), a second semiconductor layer (19) on the first semiconductor layer (15), and a multi-quantum well structure (17) including at least one well layer (17b) and at least one barrier layer (17a) between the first and second semiconductor layers. A carrier trap portion (27) is formed in at least one layer within the multi-quantum well structure (17). The carrier trap portion (27) has a band-gap energy that gradually decreases from a periphery of the carrier trap portion to a center thereof.
申请公布号
EP2226854(A1)
申请公布日期
2010.09.08
申请号
EP20090010817
申请日期
2009.08.24
申请人
LEE, CHUNG HOON;KIM, DAE WON;KAL, DAE SUNG;NAM, KI BUM
发明人
LEE, CHUNG HOON;KIM, DAE WON;KAL, DAE SUNG;NAM, KI BUM