发明名称
摘要 A failure detection device detects the voltage across the main electrodes of an IGBT via a diode. The failure detection device determines occurrence of short-circuit failure in the IGBT when the anode voltage of the diode is lower than a first predetermined reference voltage. Determination can be made, excluding the case of a proper operation corresponding to a flywheel diode in an ON state, preferably together with the condition that the anode voltage of the diode is higher than a second predetermined reference voltage.
申请公布号 JP4538047(B2) 申请公布日期 2010.09.08
申请号 JP20070332372 申请日期 2007.12.25
申请人 发明人
分类号 H02M1/00;H02H7/122;H02H7/20;H02M7/48;H03K17/00;H03K17/08;H03K17/56;H03K17/567 主分类号 H02M1/00
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