发明名称 |
BACKPLANE STRUCTURES FOR ELECTRONIC DEVICES |
摘要 |
There is provided a backplane for an organic electronic device including a TFT substrate having a base substrate, a polysilicon layer, a gate dielectric layer, a gate electrode, an interlayer dielectric, and a data electrode; an insulating layer over the TFT substrate; a multiplicity of first openings in the insulating layer having a depth d1; a multiplicity of pixelated diode electrode structures, wherein a first set of diode electrode structures are in the first openings; and a bank structure defining pixel areas over the diode electrode structures; wherein the first openings and first set of diode electrode structures are in at least a first set of the pixel areas. |
申请公布号 |
EP2225776(A1) |
申请公布日期 |
2010.09.08 |
申请号 |
EP20080862732 |
申请日期 |
2008.12.11 |
申请人 |
E. I. DU PONT DE NEMOURS AND COMPANY |
发明人 |
TSAI, YAW-MING, A.;PARKER, IAN, D.;MEINEL, INES |
分类号 |
H01L23/48;H01L27/32;H01L51/52 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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