发明名称 |
CMOS image sensor including an interlayer insulating layer and method of manufacturing the same |
摘要 |
Provided are a CMOS image sensor and a method of manufacturing the same. The CMOS image sensor includes a semiconductor substrate having photodiodes and transistors. An interlayer insulating layer is formed on the resultant structure having the photodiodes and transistors, and light blocking patterns are formed on the interlayer insulating layer to surround the peripheries of the photodiodes.
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申请公布号 |
US7791158(B2) |
申请公布日期 |
2010.09.07 |
申请号 |
US20060385958 |
申请日期 |
2006.03.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG HEE-GEUN;ROH JAE-SEOB;LEE SEOK-HA |
分类号 |
H01L31/0232 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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