发明名称 Ion implantation apparatus
摘要 A beam line before incidence on a beam scanner is arranged with an injector flag Faraday cup that detects a beam current by measuring a total beam amount of an ion beam to be able to be brought in and out thereto and therefrom. When the ion beam is shut off by placing the injector flag Faraday cup on a beam trajectory line, the ion beam impinges on graphite provided at the injector flag Faraday cup. At this occasion, even when the graphite is sputtered by the ion beam, since the injector flag Faraday cup is arranged on an upstream side of the beam scanner and the ion beam is shut off by the injector flag Faraday cup, particles of the sputtered graphite do not adhere to a peripheral member of the injector flag Faraday cup.
申请公布号 US7791049(B2) 申请公布日期 2010.09.07
申请号 US20080100973 申请日期 2008.04.10
申请人 SEN CORPORATION AN SHI AND AXCELIS COMPANY 发明人 TSUKIHARA MITSUKUNI;FUJII YOSHITO
分类号 H01J37/317;G21K5/04 主分类号 H01J37/317
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