发明名称 |
Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film |
摘要 |
A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.
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申请公布号 |
US7790627(B2) |
申请公布日期 |
2010.09.07 |
申请号 |
US20070001381 |
申请日期 |
2007.12.11 |
申请人 |
ROHM CO., LTD. |
发明人 |
IWAMOTO KUNIHIKO;NABATAME TOSHIHIDE;TOMINAGA KOJI;YASUDA TETSUJI |
分类号 |
H01L21/318;H01L21/8242;H01L21/28;H01L21/302;H01L21/461;H01L21/469;H01L21/4763;H01L29/51;H01L29/78 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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