Memory integrated circuit device providing improved operation speed at lower temperature

摘要

A memory integrated circuit device may include a first temperature sensing unit, a first voltage adjusting unit, and a MOS back bias voltage outputting unit. The first voltage adjusting unit may be configured to output a voltage based on an output signal of the temperature sensing unit such that the voltage output changes based on changes in a sensed temperature. The MOS back bias voltage outputting unit may be configured to receive the voltage output by the voltage adjusting unit and configured to output the MOS back bias voltage based on the voltage output by the first voltage adjusting unit.