发明名称 Method of achieving dense-pitch interconnect patterning in integrated circuits
摘要 Components in integrated circuits (ICs) are fabricated as small as possible to minimize sizes of the ICs and thus reduce manufacturing costs per IC. Metal interconnect lines are formed on minimum pitches possible using available photolithographic printers. Minimum pitches possible for contacts and vias are larger than minimum pitches possible for metal interconnect lines, thus preventing dense rectilinear grid configurations for contacts and vias. The instant invention is an integrated circuit, and a method of fabricating an integrated circuit, wherein metal interconnect lines are formed on a minimum pitch possible using a photolithographic printer. Contacts and vias are arranged to provide connections to components and metal interconnect lines, as required by the integrated circuit, in configurations that are compatible with the minimum pitch for contacts and vias, including semi-dense arrays.
申请公布号 US7790525(B2) 申请公布日期 2010.09.07
申请号 US20070874501 申请日期 2007.10.18
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 PRINS STEVEN LEE;BLATCHFORD JAMES WALTER
分类号 H01L21/00;H01L21/8234;H01L21/84 主分类号 H01L21/00
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