发明名称 |
Plating method |
摘要 |
A method of forming an electrode on a semiconductor wafer by plating is disclosed that is able to reliably prevent leakage of a plating solution during the plating process. The plating method comprises the steps of forming a conductive layer on a semiconductor wafer; forming a negative resist layer on the conductive layer; exposing a center portion of the negative resist layer; exposing a peripheral region of the negative resist layer after the step of exposing the center portion of the negative resist layer; developing the exposed negative resist layer to form a predetermined plating pattern; and performing plating on the plating pattern.
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申请公布号 |
US7790359(B2) |
申请公布日期 |
2010.09.07 |
申请号 |
US20050072724 |
申请日期 |
2005.03.04 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
YAMANO TAKAHARU |
分类号 |
C25D7/12;H01L21/00;C25D5/02;G03F7/00;H01L21/027;H01L21/28;H01L21/3205;H01L21/44 |
主分类号 |
C25D7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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