Method of making Hydrogenated nanocrystalline silicon thin films using DC bias,申请号KR20080018321-传众专利搜索

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发明名称	Method of making Hydrogenated nanocrystalline silicon thin films using DC bias
摘要
申请公布号	KR100980325(B1)	申请公布日期	2010.09.07
申请号	KR20080018321	申请日期	2008.02.28
申请人		发明人
分类号	B82B3/00	主分类号	B82B3/00
代理机构		代理人
主权项
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