| 摘要 |
Example embodiments provide a non-volatile memory device and methods of forming the same. The non-volatile memory device may define an active region in a semiconductor substrate, and may include a device isolation layer extending in a first direction, bit lines in the semiconductor substrate, the bit lines extending in a second direction which intersects the first direction; word lines extending in the first direction and covering the active region; and charge storage patterns between the word lines and active region, wherein the charge storage patterns may be in pairs on both edges of the bit lines, and a pair of charge storage patterns may be spaced apart from each other by the word lines.
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