发明名称 Ion implanting apparatus for forming ion beam shape
摘要 Aimed at providing an ion implantation apparatus elongated in period over which failure of a target work, due to deposition and release of ion species typically to and from the inner surface of a through-hole shaping a beam shape of ion beam, may be avoidable, reduced in frequency of exchange of an aperture component, and consequently improved in productivity, an aperture component shaping a beam shape has a taper opposed to the ion beam, in at least a part of inner surface of at least the through-hole, and has a thick thermal-sprayed film formed so as to cover the inner surface and therearound of the through-hole.
申请公布号 US7791040(B2) 申请公布日期 2010.09.07
申请号 US20080219526 申请日期 2008.07.23
申请人 NEC ELECTRONICS CORPORATION 发明人 IKEDA MINORU;IIDA TOSHIO
分类号 G21K5/04 主分类号 G21K5/04
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