CAPACITOR HAVING FERROELECTRIC THIN FILM

摘要

PURPOSE: A capacitor is provided to prevent dielectric breakdown by interposing a ferroelectric thin film between a conductive electrode and a semiconductor electrode. CONSTITUTION: A capacitor includes a conductive electrode, a semiconductor electrode, and a ferroelectric thin film. A semiconductor electrode is formed by doping a substrate with N type materials. The substrate is made of SrTiO3. The N type material is Nb. The doping ratio of Nb is 0 to 0.5 wt%. A ferroelectric thin film is deposited on a semiconductor electrode by a PLD(Pulsed Laser Deposition) method. The ferroelectric thin film includes BaTiO3. The ferroelectric thin film is deposited inside a main chamber(1).