| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the tilted defect of a bit line pattern by forming a supporting layer connecting the bit line pattern of top of bit line contact in a direction perpendicular to a bit line pattern. CONSTITUTION: An element isolation film(310) for defining an active area(300) of bar shape is formed on a semiconductor substrate. A gate(335) intersecting in a perpendicular direction to a longitudinal direction of the active area is formed. A landing plug(330) is formed on the both external areas of the active area.
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