| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to increase doping efficiency by preventing a phenomenon where a doped impurity is expanded from a N type polysilicon layer surface. CONSTITUTION: An N type amorphous silicon layer is formed on a semiconductor substrate comprising a NMOS area(2000a) of a cell region, a NMOS area(2000b) of the peripheral area, and a PMOS area(2000c). The impurity is injected into the PMOS area of the peripheral area to form an amorphous silicon layer of P-type.
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