ERASING METHOD OF NONVOLATILE MEMORY DEVICE AND READING METHOD THEREOF

摘要

PURPOSE: An erasing method of a nonvolatile memory device and a read-out method thereof are provided to generate a modified read-out voltage by adding a maximum read-out verification voltage to a read-out voltage when a read-out verification voltage difference is less than a predetermined value. CONSTITUTION: A memory device executes an erase operation based on an erase voltage(S21). The memory device verifies a verification voltage of 0V(S22). The pass state of a verification operation is determined(S23). The erase operation is completed during the pass state of the verification operation. A proper erase voltage for the completion of the erase operation is searched by using a binary search method(S24). The memory device executes the erase operation based on the erase voltage which is searched with the binary search method.