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发明名称
Method of forming an active region in a semiconductor device
摘要
申请公布号
KR100979715(B1)
申请公布日期
2010.09.03
申请号
KR20030046296
申请日期
2003.07.09
申请人
发明人
分类号
H01L21/20
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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