| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To increase an aperture ratio of a pixel section and provide an optimum TFT configuration, in an active matrix type liquid crystal display device incorporating a drive circuit, such as a shift register and buffer circuit, onto the same substrate. <P>SOLUTION: An n-channel type TFT in which an LDD overlapping with a gate electrode is provided is formed in the buffer circuit, and an LDD not overlapping with the gate electrode is provided in the n-channel type TFT of the pixel section. A retention capacity provided at the pixel section is formed by a light-shielding film, and a dielectric film and a pixel electrode formed on the light-shielding film. Especially, Al is used for the light-shielding film, the dielectric film is formed by an anodization method, and an Al oxide film is used. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
