| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress occurrences of electrical connection defects at a stacked structure in a WCSP semiconductor device of a multilayer redistribution structure having the stacked structure. <P>SOLUTION: At least one of the first processing, in which, after a first electrically conductive material is filled in a first opening 16a to form a first via interconnect, a first redistribution layer 20 electrically connected to the first via interconnect is formed on a first insulating layer 16 with the first electrically conductive material, which is the process of forming the first redistribution layer 20, and second processing, in which, after a second electrically conductive material is filled in a second opening 22a to form a second via interconnect, a second redistribution layer 26 electrically connected with the second via interconnect is formed on a second insulating layer 22 with the second electrically conductive material, which is the process of forming the second redistribution layer 26, is executed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
