| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser for individually controlling both the polarization and spread angle of a laser beam, while achieving compatibility between the characteristics of both. Ž<P>SOLUTION: The surface-emitting semiconductor laser includes an n-type GaAs semiconductor substrate, an n-type lower DBR, an active region, a p-type current constricting layer, a p-type upper DBR 108, a p-type electrode 112, and an n-side electrode on the backside of the substrate. The oxidation aperture 106b of the current constricting layer has an oval shape having a long axis and a short axis. An opening 112 formed in the p-side electrode has an oval shape having a long axis and a short axis in the same direction of the orientation of the oxidation aperture. The end surface shape 112a of the opening 112 in the long axis direction is worked to be tapered. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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