| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor which is applicable to control over a pixel circuit and a gate driving circuit by reducing the OFF current without reducing the ON current. SOLUTION: The thin-film transistor 100 has a microcrystal silicon layer 4 whose center part serves as a channel and an amorphous silicon layer 5 provided on the microcrystal silicon layer 4, wherein a source electrode 7 and a drain electrode 8 constituted of two layers of a lower source electrode 7a and a lower drain electrode 8a connected to contact layers 6a and 6b respectively, and an upper source electrode 7b and an upper drain electrode 8b formed on upper surfaces of the lower source electrode 7a and lower drain electrode 8a, and channel-side ends of the upper source electrode 7b and upper drain electrode 8b protrude in an eaves shape to channel-side ends of the lower source electrode 7a and lower drain electrode 8a respectively. COPYRIGHT: (C)2010,JPO&INPIT |
