| 摘要 |
A method for fabricating a contact of a semiconductor device includes the steps of forming a dielectric layer having a contact hole on a semiconductor substrate, forming an out-gassing barrier layer comprising a poly-silicon layer to cover at least inner walls of the contact hole in order to prevent undesired out-gassing from the dielectric layer, and depositing an aluminum layer on the out-gassing barrier layer. The contact structure of the semiconductor device includes the aluminum layer filled in the contact layer formed on the semiconductor substrate, and the out-gassing barrier layer formed under the aluminum layer to prevent out-gassing from the dielectric layer. A fine contact can be formed along with the aluminum layer, thereby realizing the contact structure of a lower contact resistance. As a result, it is possible to realize stabilization of an overall contact resistance of the semiconductor device.
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