发明名称 Mechanism for Forming a Remote Delta Doping Layer of a Quantum Well Structure
摘要 A method of fabricating a quantum well device includes forming a diffusion barrier on sides of a delta layer of a quantum well to confine dopants to the quantum well.
申请公布号 US2010219396(A1) 申请公布日期 2010.09.02
申请号 US20100715034 申请日期 2010.03.01
申请人 JIN BEEN-YIH;KAVALIEROS JACK T;DATTA SUMAN;MAJUMDAR AMLAN;CHAU ROBERT S 发明人 JIN BEEN-YIH;KAVALIEROS JACK T.;DATTA SUMAN;MAJUMDAR AMLAN;CHAU ROBERT S.
分类号 H01L29/12;H01L21/20 主分类号 H01L29/12
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