MEMORY CELL COMPRISING A DIODE CONNECTED TO AT LEAST THREE RESISTIVITY-SWITCHING ELEMENTS AND METHODS OF FABRICATING AND READING THE SAME

摘要

A non-volatile memory device (100) includes a first electrode (110), a diode steering element (120) at least three resistivity switching storage elements (131,132,133) and a second electrode (151) The diode steering element electrically contacts the first electrode and the at least three resistivity switching storage elements. The second electrode electrically contacts only one of the at least three resistivity switching storage elements.