| 发明名称 |
SEMICONDUCTOR MATERIAL HAVING PHOTO-RESPONSIBILITY, PHOTOELECTRODE MATERIAL AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a p-type semiconductor having photo-responsibility. <P>SOLUTION: There is provided the p-type semiconductor material containing tantalum (Ta) to which nitrogen (N) is added, and oxygen (O). In particular, it is preferable that the p-type semiconductor material has a Ta<SB>2</SB>O<SB>5</SB>structure in which the amount of addition of nitrogen is set to 7.1-49.9 atom.%. <P>COPYRIGHT: (C)2010,JPO&INPIT |
| 申请公布号 |
JP2010189227(A) |
申请公布日期 |
2010.09.02 |
| 申请号 |
JP20090036272 |
申请日期 |
2009.02.19 |
| 申请人 |
TOYOTA CENTRAL R&D LABS INC |
发明人 |
SAEKI SHU;MORIKAWA KENJI |
| 分类号 |
C01G35/00;B01J23/20;B01J35/02;H01L31/0264 |
主分类号 |
C01G35/00 |
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