| 摘要 |
PROBLEM TO BE SOLVED: To form a switch element having a resistance changing layer which changes a resistance value by a history of an applied electric field in multilayered wiring, and to restrain the wiring or a surface of the resistance changing layer from being damaged. SOLUTION: This semiconductor device includes: a first wiring layer 12; a second wiring layer 16; and a switch via 35. The first wiring layer 12 has first wiring 32, and the second wiring layer 16 has second wiring 39. The switch via 35 connects the first wiring 32 with the second wiring 39. The switch via 35 has the switch element having a resistance changing layer 33 at least in the bottom. The resistance changing layer 33 changes a resistance value in response to the history of the electric field applied thereto. COPYRIGHT: (C)2010,JPO&INPIT |
