| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for controlling a dopant concentration profile on an emitter-base interface of a bipolar transistor. Ž<P>SOLUTION: A method for manufacturing a junction comprises (or consists of) the steps of: forming a first semiconductor material comprising a first dopant having a first concentration; forming a second semiconductor material comprising a second dopant, having a second concentration thereby forming a junction, thereupon; and depositing by Atomic Layer Epitaxy or Vapor Phase Doping at least a fraction of a monolayer of a precursor suitable to form the second dopant on the first semiconductor material, prior to forming the second semiconductor material, thereby increasing the second concentration of the second dopant at the junction. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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