EXCHANGE-BIAS BASED MULTI-STATE MAGNETIC MEMORY, LOGIC DEVICE, AND MAGNETICALLY STABILIZED MAGNETIC STORAGE

摘要

PROBLEM TO BE SOLVED: To provide magnetic materials and methods for using ferromagentic and antiferromagnetic coupling and exchange bias for binary and multistage magnetic memory device. SOLUTION: Technologies, materials and devices are disclosed, which achieve high-density magnetic storage based on a magnetic exchange bias generated by magnetic coupling of a ferromagnetic layer and an adjacent antiferromagnetic layer. By using the magnetic coupling, a binary magnetic memory device is stabilized to construct multistage magnetic memory devices. COPYRIGHT: (C)2010,JPO&INPIT