PHOTODIODE AND PHOTODIODE ARRAY

摘要

A photodiode array (PDA1) is equipped with a substrate (S) for which multiple light-detecting channels (CH) have an n type semiconductor layer (32). The photodiode array (PDA1) is equipped with: a p- type semiconductor layer (33) formed on the n type semiconductor layer (32); resistances (24), which are provided for each light-detecting channel (CH) and one end of which is connected to a signal-conducting wire (23); and n type separation parts (40) formed between the multiple light-detecting channels (CH). The p- type semiconductor layer (33) forms a pn junction at the interface with the n type semiconductor layer (32), and has multiple multiplication regions (AM) which correspond to the light-detecting channels and which avalanche-multiply carriers generated when the light to be detected is incident. Irregular recesses and protrusions (10) are formed on the surface of the n type semiconductor layer (32), and said surface is optically exposed.