TRANSISTOR, TRANSISTOR MANUFACTURING METHOD, AND MANUFACTURING DEVICE THEREOF

摘要

Provided are a transistor and a manufacturing method thereof with which variations in the electrical conductivity of an active layer can be suppressed and responsiveness can be improved while assuring the gate withstand voltage. The transistor is provided with a gate insulating film (14) having a laminated structure, which comprises a first insulating layer (14A) made of a silicon nitride film and a second insulating layer (14B) made of a silicon oxide film between a gate electrode (11) made of copper and an active layer (15) made of an oxide semiconductor. The second insulating layer (14B) prevents fluctuation in the electrical conductivity of the active layer (15) caused by the interfacial reaction between the first insulating layer (14A) and the active layer (15). The first insulating layer (14A) functions as a barrier layer for preventing dispersion of the copper atoms which constitute the gate electrode (11) into the second insulating layer (14B).