发明名称 THIN-FILM TRANSISTOR ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide: a thin-film transistor array substrate capable of reducing the number of photolithography processes without using a semi-transparent mask in an FFS mode liquid crystal display device; a method for manufacturing the same; and a liquid crystal display device. <P>SOLUTION: The thin-film transistor array substrate includes a source line 44 that is formed above a gate insulating film 11 covering a gate line 43, a semiconductor layer 2 that is formed on the gate insulating film 11 and placed in a substantially whole area below a drain electrode 5, in a substantially whole area below a source electrode 4, in a substantially whole area below the source line 44 and in an area opposite to the gate electrode, a pixel electrode 6 that is directly overlapped with and formed on the drain electrode 5, a transparent conductive pattern 6a that is directly overlapped with and formed on the source electrode 4 and the source line 44 in the same layer as the pixel electrode 6, and a counter electrode 8 that is formed on an interlayer insulating layer 12 covering the pixel electrode 6 and the transparent conductive pattern 6a and generates a fringe electric field with the pixel electrode 6. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010191410(A) 申请公布日期 2010.09.02
申请号 JP20090281645 申请日期 2009.12.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAGANO SHINGO;MASUTANI YUICHI
分类号 G02F1/1368;G02F1/1343 主分类号 G02F1/1368
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