发明名称 CAPACITIVE ELEMENT, DESIGNING METHOD OF THE SAME, AND INTEGRATED CIRCUIT DEVICE INCLUDING THE SAME
摘要 PROBLEM TO BE SOLVED: To design a device structure in which variations in capacitance value are small, when compared with a fine structure. SOLUTION: A total capacitance value, an interline capacitance value, and an interlayer capacitance value are calculated for a plurality of device structures having been changed by a statistical procedure for a parameter regarding respective wirings of a multilayer wiring. Then, such device structure is identified as a difference between total capacitance values among device structures is, for example, 0.1 or less, while a difference between the ratio of interline capacitance value against total capacitance value and the ratio of interlayer capacitance value with respect to the total capacitance value is, for example, 0.01 or less, among a plurality of device structures. The parameter regarding the specified device structure is taken as a parameter for respective wirings of the multilayer wiring which constitutes a capacitive element. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010192495(A) 申请公布日期 2010.09.02
申请号 JP20090032245 申请日期 2009.02.16
申请人 SONY CORP 发明人 DEWA KYOKO;YASUSHIGE HIROAKI;ENOMOTO YASUYUKI
分类号 H01L21/822;H01L21/82;H01L27/04 主分类号 H01L21/822
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